第一章 单元测试
1、单选题：Which of the following is not a commonly used semiconductor material’? （ ）
A:silicon
B:germanium
C:lead
D:carbon
正确答案:【lead】
2、单选题：The characteristic of an ideal diode are those of a switch that can conduct current（ ） .
A:in both directions but in only one direction at a time
B:in one direction only
C:depends on the circuit it is used in
D:in both directions
正确答案:【in one direction only】
3、单选题：When a diode is doped with either a pentavalent or a trivalent impurity its resistance will （ ） .
A:increase
B:decrease
C:make the resistance stable against variation due to temperature
正确答案:【decrease】
4、单选题：The piecewise linear model, equivalent circuit of the diode consists of （ ）.
A:a battery, a small resistor, and the ideal diode
B:a junction capacitor, a battery, a small resistor, and the ideal diode
C:the ideal diode
D:a battery and the ideal diode
正确答案:【a battery, a small resistor, and the ideal diode】
5、单选题：When a p-n junction is reverse-biased, its junction resistance is （ ）.
A:determined by the components that are external to the device
B:low
C:high
D:constantly changing
正确答案:【high】
第二章 单元测试
1、单选题：What is the value of the voltage dropped across forward-biased silicon diodes that are connected in parallel with each other? （ ）.
A:0.7 V
B:0.35 V
C:11.3 V
D:1.4 V
正确答案:【0.7 V】
2、单选题：The resistor voltage and resistor current in this circuit are （ ）.
A:2 V, 11 mA
B:10 V, 5 mA
C:11 V, 11 mA
D:11 V, 2 mA
正确答案:【11 V, 11 mA】
3、单选题：Which of the following circuits is used to eliminate a portion of a signal? （ ）.
A:Voltage divider
B:Clipper
C:Voltage multiplier
D:Damper
正确答案:【Clipper】
4、单选题：The circuit shown here is a （ ）. 
A:parallel clipper
B:series clipper
C:series clamper
D:shunt clamper
正确答案:【parallel clipper】
5、单选题：The Zener diode must be operated such that （ ）.
A:the applied voltage is greater than 
B:
is less than the specified 
C:
D:All of these
正确答案:【All of these】
第三章 单元测试
1、单选题：In the active region, the base-emitter junction （ ）.
A:and the base-collector junctions are both forward-biased
B:is reverse-biased while the base-collector junction is forward-biased
C:is forward-biased while the base-collector junction is reversed-biased
D:and the base-collector junctions are both reverse-biased
正确答案:【is forward-biased while the base-collector junction is reversed-biased】
2、单选题：A BJT has measured dc current values of 
= 0.1 mA and 
= 8.0 mA. When IB is varied by 100 μA, IC changes by 10 mA. What is the value of the βac for this device?（ ）.
A:80
B:10
C:800
D:100
正确答案:【100】
3、单选题：When a BJT is operating in the active region, the voltage drop from the base to the emitter 
is approximately equal to the （ ）。
A:emitter voltage
B:base current times the base resistor
C:base bias voltage
D:diode drop (about 0.7 V)
正确答案:【diode drop (about 0.7 V) 】
4、单选题：BJTs are commonly used as （ ）.
A:the primary components in rectifiers
B:series damper circuits
C:the primary components in amplifiers
正确答案:【the primary components in amplifiers】
5、单选题：The condition where increase in bias current will not cause further increases in collector current is called （ ）.
A:saturation
B:active operation
C:cutoff
正确答案:【saturation】
第四章 单元测试
1、单选题：When a BJT is biased in the cutoff region the collector-to-emitter voltage is typically equal to （ ）.
A:the collector supply voltage
B:the emitter voltage
C:the collector current times the collector resistor
D:0.03 V
正确答案:【the collector supply voltage 】
2、单选题：Calculate the collector-emitter voltage for this emitter-stabilized circuit.（ ） 
A:14.24 V
B:4.32 V
C:10.68 V
D:0.1335 V
正确答案:【4.32 V】
3、单选题：The difference between the resulting equations for a network in which an npn transistor has been replaced by a pnp transistor is （ ）.
A:the value of β
B:the values of the resistors
C:the sign associates with the particular quantities
正确答案:【the sign associates with the particular quantities】
4、单选题：The term quiescent means （ ）.
A:inactive
B:at rest
C:active
D:midpoint-biased
正确答案:【inactive】
5、单选题：Voltage-divider bias stability is （ ）.
A:dependent on alpha
B:dependent of beta
C:independent of beta
D:dependent on the collector resistor
正确答案:【independent of beta】
第五章 单元测试
1、单选题：Given this configuration, determine the input impedance if VS = 40 mV, Rsense = 0.5 kΩ, and the input current is 20 μA.（ ）
A:582 kΩ
B:1.5 MΩ
C:5.822 MΩ
D:1,500 Ω
正确答案:【1,500 Ω】
2、单选题：The 
transistor model replaces the （ ） with the junction diode’s ac resistance.
A:collector-emitter junction
B:collector-base junction
C:emitter—base junction
正确答案:【emitter—base junction 】
3、单选题：Calculate the voltage gain for this circuit. （ ）
A:-8.4
B:-16.34
C: -7.91
D:-137.25
正确答案:【-137.25】
4、单选题：A transistor amplifier has an input signal applied to its emitter terminal and an output signal taken from its collector terminal. The amplifier is a(n) （ ）.
A:emitter follower
B:common-emitter amplifier
C:common-base amplifier
D:common-collector amplifier
正确答案:【common-base amplifier】
5、单选题：The voltage gain of a very well-designed common collector amplifier configuration, using a pnp transistor, is （ ）.
A:in the range -0.95 to -0.99
B:about -0.9
C:in the range 0.95 to 0.99
D:about 0.9
正确答案:【in the range 0.95 to 0.99】
第六章 单元测试
1、单选题：Shockley’s equation defines the （ ） of the FET and are unaffected by the network in which the device is employed.
A:input/output characteristics
B:drain characteristics
C:transfer characteristics
D:
characteristics
正确答案:【transfer characteristics】
2、单选题：For an n-channel depletion MOSFET, 
= 8 mA and 
= -6 V. If 
= 0.8 V, what is the value of the drain current, 
? （ ）
A:8 mA
B:6 mA
C:10.28 mA
D:10.25 μA
正确答案:【10.28 mA】
3、单选题：The region of the JFET drain curve that lies between pinch-off and breakdown is called （ ）.
A:the saturation region
B:the constant-voltage region
C:the ohmic region
正确答案:【the saturation region】
4、多选题：In the family of FETs, you can expect to find （ ）.
A:an n-channel type
B:a p-channel type
C:unipolar structure
正确答案:【an n-channel type;a p-channel type;unipolar structure】
5、多选题：FETs usually （ ）.
A:are less sensitive to temperature change than BJTs
B:
are smaller in construction than BJTs
C:have a higher input impudence than BJTs
正确答案:【are less sensitive to temperature change than BJTs;
are smaller in construction than BJTs
;have a higher input impudence than BJTs】
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